Work

Vertical GaN-on-Tungsten High Voltage pn-Diodes From Sapphire-Grown GaN Membranes

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3540156

Authors: E. Brusaterra, E. Bahat Treidel, L. Deriks, S. Danylyuk, E. Brandl, J. Bravin, M. Pawlak, A. Külberg, M. Schiersch, A. Thies, O. Hilt

Institutions: Ferdinand-Braun-Institut, Fraunhofer Institute for Laser Technology, EV Group (Austria)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Electronic Components and Systems for European Leadership

Award: G6982286564

OpenAlex ID: W4407316710

FWCI: 2.205

Cites: 17

Cited by: 7

Related to: 10