Work

A Multilevel Gate Driver Operating with a Single Voltage Supply and Simple Control Signals for Monolithic Integration of Power GaN HEMT

Year: 2024

Type: conference-paper

Source: IEEE Energy Conversion Congress and Exposition (ECCE)

DOI: 10.1109/ecce55643.2024.10860946

Authors: Takumi Takehisa, Takehiro Takahashi, Jun Furuta, Michihiro Shintani, Kazutoshi Kobayashi

Institution: Kyoto Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4407317001

FWCI: 1.208

Cites: 12

Cited by: 1

Related to: 10