Work

A D-Band 24-dBm MMIC Amplifier by Innovative Power Combining of GaN HEMTs in a SiC SIW

Year: 2025

Type: article

Source: IEEE Transactions on Microwave Theory and Techniques

DOI: 10.1109/tmtt.2025.3537605

Authors: Lei Li, Tianze Li, Weifeng Wu, Patrick Fay, James C. M. Hwang

Institutions: Cornell University, University of Notre Dame

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funders: National Science Foundation, U.S. Army

Awards: G1303223230, G3762063416, G399984441, Collaborative Research: High-frequency, High-power Amplifier Based on Distributed Coupling of GaN HEMTs Through a SiC Substrate-integrated Waveguide, G5087772756, MRI: Acquisition of a Millimeter-wave Vector Network Analyzer and a Probe Station Capable of a Single Sweep from 70 kHz to 220 GHz

OpenAlex ID: W4407317088

FWCI: 1.36

Cites: 30

Cited by: 6

Related to: 10