Work

Short-Circuit protection for 650 V p-gate GaN HEMTs based on gate current sensing

Year: 2024

Type: conference-paper

Source: IEEE Energy Conversion Congress and Exposition (ECCE)

Authors: Simone Palazzo, Yoann Pascal, Thiago Pereira, Giovanni Busatto, Marco Liserre

Institutions: Università degli studi di Cassino e del Lazio Meridionale, Fraunhofer Institute for Silicon Technology, Christian-Albrechts-Universität zu Kiel

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407317471

FWCI: 0.806

Cites: 14

Cited by: 1

Related to: 10