Work

TCAD Simulation of a Heavy Charged Particle Impact on an n-MOS Structure as a Part of a Memory Cell

Year: 2024

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739724700963

Authors: V. P. Smirnova, T. Yu. Krupkina

Institution: National Research University of Electronic Technology

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407335566

FWCI:

Cites: 9

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Related to: 10