Work

Research and Development of a Deep Anisotropic Silicon Plasma Etching Process with Reduced Sidewall Roughness of the Structures

Year: 2024

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739724700872

Authors: A. A. Golishnikov, N. A. Dyuzhev, V. V. Paramonov, I. V. Potapenko, M. G. Putrya, N. M. Somov, Yu. A. Chaplygin

Institution: National Research University of Electronic Technology

Language: English

Topic: Plasma Diagnostics and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407335568

FWCI: 0.104

Cites: 7

Cited by: 1

Related to: 10