Work

Study of the Thermoelectric Properties of Powerful MOSFETs

Year: 2024

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s106373972470094x

Authors: V. I. Smirnov, A. A. Gavrikov

Institutions: Russian Academy of Sciences, Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, Ulyanovsk State Technical University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407335838

FWCI:

Cites: 5

Cited by:

Related to: 10