Work

III-nitride HEMT Heterostructures with Ultrathin AlN Barrier: Obtaining and Experimental Application

Year: 2024

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739724600857

Authors: A. S. Gusev, A. O. Sultanov, R. V. Ryzhuk, T. N. Nevolina, D. Tsunvaza, G. K. Safaraliev, N. I. Kargin

Institution: National Research Nuclear University MEPhI

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407337261

FWCI: 0.149

Cites: 45

Cited by: 1

Related to: 10