Work

Study of ALD-Deposited TaN Properties

Year: 2024

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739724600778

Authors: A. Miakonkikh, Yu. Chesnokov, R. Gaidukasov, V. Kuzmenko

Institutions: Institute of Physics and Technology, MIREA - Russian Technological University, Kurchatov Institute

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407337465

FWCI: 0.208

Cites: 20

Cited by: 2

Related to: 10