Work

Oxygen vacancy distribution and phase composition in scaled, Hf0.5Zr0.5O2-based ferroelectric capacitors

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0245595

Authors: T. Iung, L. Pérez Ramírez, A. Gloskovskii, C.-Yi Cho, M.-Y. Lao, S. De, T.-H Hou, C. Lubin, M. Gros-Jean, N. Barrett

Institutions: Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Université Paris-Saclay, CEA Paris-Saclay - Etablissement de Saclay, CEA Paris-Saclay, Deutsches Elektronen-Synchrotron DESY, National Yang Ming Chiao Tung University, National Tsing Hua University, STMicroelectronics (France)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Deutsche Forschungsgemeinschaft, Agence Nationale de la Recherche, STMicroelectronics, HORIZON EUROPE European Research Council

Awards: G3608428777, G4179536649, Dopant and Defect Physics for Device Optimization for Hafnium Oxide based Devices, Dotierungs und DefektPhysik für Device Optimierung von Hafnium Oxid basierten Bauelementen

OpenAlex ID: W4407349897

FWCI: 3.164

Cites: 22

Cited by: 14

Related to: 10