Year: 2025
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Chalcogen phosphates of transition metals make up a well-known group of antiferromagnetic semiconductors with the general formula MPX 3, where M represents a transition metal and X is a chalcogen, either sulfur or selenium. Most of these compounds adopt a similar structure; however, mercury phosphochalcogenides present an exception with their unique van der Waals layered structure. Transition metal chalcogenides are highly appealing materials for photodetectors due to their exceptional optoelectronic properties. Among them, HgPSe 3, a layered van der Waals phosphoselenide, shows promise for photodetection over a broad spectral range, from visible light to X-rays. Despite this, the electronic processes governing its photoresponse remain unclear. In this study, we demonstrate a nanosecond response time of a HgPSe 3 -based photodetector to visible light and gain deeper insights into the underlying charge carrier dynamics through a comprehensive investigation using complementary time-resolved experimental techniques. Our findings on the role of carrier traps provide a potential pathway for optimizing optoelectronic device performance.
Source: Nano Letters
Authors: Nikolas Antonatos, Artur P. Herman, Beatriz de Simoni, Karolina Ciesiołkiewicz, Eduard Belas, Marián Betušiak, Roman Grill, Kalyan Jyoti Sarkar, Amutha Subramani, David Sedmidubský, Valentino Jadriško, Alessandro Baserga, Micol Bertolotti, Stefano Dal Conte, Christoph Gadermaier, Giulio Cerullo, Antonella Treglia, Annamaria Petrozza, Robert Kudrawiec, Zdeněk Sofer
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
Awards: Next Generation of 2D Monoelemental Materials, G2460755258, G2510493787, G2677629327, G2678520069, Development of the X-ray and gamma-ray sensors based on the bulk inorganic metal halide perovskites., G3200947744, G3269556148, G3391785330, Developing New 2D Materials and Heterostructures for Printed Digital Devices, G3810236772, G4129145046, G423459364, G4312622825, G434337789, G4396925471, G5232843313, G5378338472, Developing optoelectronics in two-dimensional semiconductors, G569086322, G6644933418, G6990624850, G7455520032, G7621391830, G7806810045, G7875408134, G8140083606
OpenAlex ID: W4407354000