Work

Impact of HfO2 Dielectric on DC/RF Characteristics of AlN/GaN/AlGaN/SiC MOSHEMTs

Year: 2024

Type: conference-paper

Source: International Conference on Emerging Frontiers in Electrical and Electronic Technologies (ICEFEET)

DOI: 10.1109/icefeet64463.2024.10866749

Authors: Gauri Deshpande, Sandip Bhattacharya, J. Ajayan

Institution: SR University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407360991

FWCI:

Cites: 14

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Related to: 10