Ternary Logic Transistors Using Multi‐Stacked 2D Electron Gas Channels in Ultrathin Oxide Heterostructures (Adv. Sci. 6/2025)
Year: 2025
Type: article
Abstract: Ternary Logic Transistors In article number 2410519, Tae Joo Park, Ji Hyeon Choi, Sang Woon Lee, and co-workers develop a novel and simple ternary logic transistor by stacking 2D electron gas channels. The cover highlights the ternary logic states of 0, 1, and 2, achieved through the sequential operation of the upper and lower channels, induced by the threshold voltage difference between the stacked channels.
Source: Advanced Science
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,730
OpenAlex ID: W4407371165