Work

Analysis of Leakage Channel with Different Al Composition back Barriers in AlN/GaN High‐Electron‐Mobility Transistors on Silicon

Year: 2025

Type: article

Source: physica status solidi (a)

DOI: 10.1002/pssa.202400983

Authors: Siyu Liu, Yihao Zhuang, Hanchao Li, Pengju Cui, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng

Institutions: Nanyang Technological University, Agency for Science, Technology and Research, Institute of Microelectronics, Singapore-MIT Alliance for Research and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Research Foundation

Award: G8745428258

OpenAlex ID: W4407375837

FWCI: 0.646

Cites: 18

Cited by: 2

Related to: 10