Work

The time dependence of electrical current of Ar ion-etched ZnO

Year: 2025

Type: article

Abstract: The time dependence of electrical current of Ar ion-etched ZnO is studied. It is found that Ar ion etching is beneficial for introducing vacancy defects such as the oxygen vacancy and zinc vacancy. At a high enough electrical bias voltage, there is an abrupt increase in electrical current with increasing bias voltage time, indicating the growth and formation of a conducting filament. The light illumination has proved to be helpful for filament formation and growth. A quantified relation between the electrical current and time is obtained. The filament growth mechanism can be ascribed to nucleation and growth of a new phase, which is determined by the Johnson–Mehl–Avrami equation.

Source: AIP Advances

DOI: 10.1063/5.0237980

Author: C. M. Liu

Institution: University of Electronic Science and Technology of China

Language: English

Topic: ZnO doping and properties

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

Funder: National Natural Science Foundation of China