Work

TCAD modeling of 3D 4H-SiC MOSFET and simulation of heat distribution during power cycling

Year: 2024

Type: conference-paper

Source: International Conference on Electrical, Mechanical and Computer Engineering (ICEMCE)

DOI: 10.1109/icemce64157.2024.10862159

Authors: Boyang Hu, Shijie Pan, Shiwei Feng, Boyang Zhang

Institution: Beijing University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W4407403760

FWCI: 0.806

Cites: 6

Cited by: 1

Related to: 10