Position-Sensitive Domain-by-Domain Switchable Ferroelectric Memristor
Year: 2025
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Domain-wall electronics based on the tunable transport in reconfigurable ferroic domain interfaces offer a promising platform for in-memory computing approaches and reprogrammable neuromorphic circuits. While conductive domain walls have been discovered in many materials, progress in the field is hindered by high-voltage operations, stability of the resistive states and limited control over the domain wall dynamics. Here, we show nonvolatile memristive functionalities based on precisely controllable conductive domain walls in tetragonal Pb(Zr,Ti)O 3 thin films within a two-terminal parallel-plate capacitor geometry. Individual submicron domains can be manipulated selectively by position-sensitive low-voltage operations to address distinct resistive states with nanoampere-range conduction readout. Quantitative phase-field simulations reveal a complex pattern of interpenetrating a- and c-domain associated with the formation of 2D conducting layers at the intertwined regions and the emergence of 3D percolation channels of extraordinary high conductivity. Subnanometer resolution polarization mapping experimentally proves the existence of such extensive segments of charged tail-to-tail domain walls with unconventional structure at the ferroelastic-ferroelectric domain boundaries.
Source: ACS Nano
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
Awards: Nanofabricación y microscopías avanzadas (NANOMIDAS), G1622782223, G2262748287, G2370269189, Memristive and multiferroic materials for emergent logic units in nanoelectronics, G2799588417, G3480869486, G3681454997, G4042783231, Physics of quantum and functional materials, G425668148, G434337789, G451917667, G5063175436, G5967599077, Memristive and multiferroic materials for emergent logic units in nanoelectronics, G7084143925, Magnetismo de nanoestructuras y sus aplicaciones, G842516163, Materials for Neuromorphic Circuits, G983705713
OpenAlex ID: W4407422952
