Year: 2025
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition-metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities for light-emitting devices. Recently, a memory-driven optical device, termed a Mem-emitter, was proposed by using these monolayers atop dielectric substrates. The successful realization of such devices heavily depends on the selection of the optimal substrate. Here, we report a pronounced memory effect in a MoSe 2 /clinochlore device, evidenced by an electric hysteresis in the intensity and energy of MoSe 2 monolayer emissions. This demonstrates both population- and transition-rate-driven Mem-emitter abilities. Our theoretical approach correlates these memory effects with internal state variables of the substrate, emphasizing that a clinochlore-layered structure is crucial for a robust and rich memory response. This work introduces a novel two-dimensional device with promising applications in memory functionalities, highlighting the importance of alternate insulators in the fabrication of van der Waals heterostructures.
Institutions: Universidade Federal de São Carlos, Brazilian Synchrotron Light Laboratory, Brazilian Center for Research in Energy and Materials, Universidade Estadual de Campinas (UNICAMP), Laboratório Nacional de Nanotecnologia, National Institute for Materials Science, Universidade Federal de Mato Grosso
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
Funders: Ministry of Education, Culture, Sports, Science and Technology, Fundação de Amparo à Pesquisa do Estado de São Paulo, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Ministério da Ciência, Tecnologia e Inovação, Conselho Nacional de Desenvolvimento Científico e Tecnológico, Universidade Federal de Ouro Preto, Centro Nacional de Pesquisa em Energia e Materiais, Japan Society for the Promotion of Science, Laboratório Nacional de Luz Síncrotron, Laboratório Nacional de Nanotecnologia
Awards: G1565398097, G1575856863, G2336638590, G2442584775, G2779470855, 高次神経機能発現に関わるIP3受容体/カルシウムチャネルの制御機構の解明, G3690646728, G3929643960, G4162329948, G4472978772, G4490370025, G4626568898, G4806815962, Magneto-polaron and non-linear Zeeman effect in 2D semiconductors, G5056309175, G7855438633, G898758523
OpenAlex ID: W4407426324