64% AlGaN Channel HFET With High Johnson’s Figure of Merit (>6 THz·V)
Year: 2025
Type: article
Source: IEEE Electron Device Letters
Authors: Jiahao Chen, Parthasarathy Seshadri, Kenneth Stephenson, Md Abdullah Mamun, Ruixin Bai, Zehuan Wang, Asif Khan, Chirag Gupta
Institutions: University of Wisconsin–Madison, University of South Carolina
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Awards: G1799842326, G3696261515
OpenAlex ID: W4407450297