Work

Toward Understanding the Positive Shift of Reverse Turn-on Voltage in the Third Quadrant Operation in Planar SiC Power MOSFETs After Avalanche Breakdown

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3536447

Authors: Wei-Cheng Lin, Yu-Sheng Hsiao, Chen Sung, Chu Thị Bích Ngọc, Rustam Kumar, Pei-Jie Chang, Surya Elangovan, Sheng-Shiuan Yeh, Chia-Lung Hung, Yi-Kai Hsiao, Hao-Chung Kuo, Chang-Ching Tu, Tian-Li Wu

Institutions: National Yang Ming Chiao Tung University, National Central University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

OpenAlex ID: W4407462797

FWCI: 1.847

Cites: 23

Cited by: 8

Related to: 10