Work

Design of T-Shape Tunnel FET with Enhanced Drain Current Characteristics at 30nm Technology

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870656

Authors: Ashutosh Kumar Yadav, Sweta Chander, Suman Lata Tripathi, Sanjeet Kumar Sinha

Institution: Lovely Professional University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407466345

FWCI: 0.779

Cites: 12

Cited by: 1

Related to: 10