Work

Comparative Performance Analysis of Dual FinFET and Gate-All-Around Triple Nanosheet FET for 5nm Node

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870821

Authors: Ram Krishna Dewangan, Vinay Kumar Singh, Mohammad Rafique Khan

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4407466913

FWCI: 3.12

Cites: 33

Cited by: 4

Related to: 10