Work

Optimizing Triple Material Staggered Heterojunction Double Gate MOSFET (TM-SH-DGMOS) Through Advanced Gate Engineering

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870606

Authors: Prasanta Kumar Khuntia, Kishore Chandra Singh, Biswajit Baral, Sudhansu M Biswal

Institution: Odisha University of Technology and Research

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407466969

FWCI:

Cites: 13

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Related to: 10