Work

Performance of HfO2 on High Electron Mobility Transistor for Microwave Applications

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870791

Authors: Swati Dhondiram Jadhav, Aboo Bakar Khan

Institution: Chhatrapati Shivaji Maharaj University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407467308

FWCI: 1.208

Cites: 13

Cited by: 1

Related to: 10