Work

Effects of Gate Metal Engineering on Electrical Characteristics of SOI MOSFET

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870664

Authors: Sonam Khera, Neetu Gupta, Prashant Kumar, Lalit Rai, Neeraj Gupta, Rashmi Gupta

Institutions: J.C. Bose University of Science & Technology, YMCA, Amity University, Amity University Gurugram

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4407467404

FWCI:

Cites: 18

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Related to: 10