Work

Lateral Straggle Based Interface Trap Sensitivity in n-p-n SOI Double Gate TFETs

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870613

Authors: Deepjyoti Deb, Saurav Nath, Prachuryya Subash Das, Ratul Kr Baruah, Rupam Goswami

Institution: Tezpur University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407467615

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Cites: 14

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Related to: 10