Work

DC Analysis of T Shape Gate, L Shape Gate, Y Shape Gate and Field-Plate Gate AlGaN/GaN Based HEMT

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870796

Authors: Lakhmikanta Mishra, G. N. Dash, Manasa Ranjan Jena

Institutions: Veer Surendra Sai University of Technology, Sambalpur University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407467891

FWCI:

Cites: 6

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Related to: 10