Work

Investigations on Novel Dual Metal Gate-Vertical C-Channel Nanosheet FET with fT of 268 GHz for Beyond 5G Application

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870830

Authors: Angelin Delighta A, Binola K Jebalin. I.V, Ancy Michel, D. Nirmal

Institution: Karunya University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4407467928

FWCI:

Cites: 21

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Related to: 10