Work

Comparative Analysis of Electrical Parameters for High Electron Mobility Transistors

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870777

Authors: Yogesh Kumar Verma, Kamal Bhatia

Institution: Lovely Professional University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407468060

FWCI:

Cites: 24

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Related to: 10