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Double Gate Tunnel FET with Core-Gate Engineering: An Effective Approach to Suppress Ambipolarity

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870762

Authors: Meenu Sharma, Vanshika Ghai, Sidhartha Dash, Guru Prasad Mishra

Institutions: National Institute of Technology Raipur, Siksha O Anusandhan University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407468754

FWCI:

Cites: 23

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Related to: 10