Work

Analysis of Stress and Strain Dynamics in Sub-7nm GAA Si- and SiGe-Channel Nanosheet FETs

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870846

Authors: Taraprasanna Dash, Eleena Mohapatra, Jhansirani Jena, Sanghamitra Das, Subhashree Choudhury, C K Maiti

Institutions: Siksha O Anusandhan University, R.V. College of Engineering

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407468779

FWCI: 1.612

Cites: 8

Cited by: 2

Related to: 10