Work

Analyzing the Analog Performance of a Novel Normally OFF Double Gate MOS-HEMT due to Gate Length Variation

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870790

Authors: Sudipta Talukder, Aditya Kumar Shaw, Chirayush Chakraborty, Atanu Kundu

Institution: Heritage Institute of Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407470410

FWCI:

Cites: 18

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Related to: 10