Work

Quasi Vertical FinFET with Step Graded Doping for Obtaining 0.037 mΩ.cm2 ON Resistance

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870763

Authors: Ancy Michel, Binola K Jebalin. I.V, Navin M George, Angelin Delighta A, D. Nirmal

Institution: Karunya University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407470417

FWCI:

Cites: 15

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Related to: 10