Work

Asymmetrically Doping Dependent Nonlinear Electron Mobility in In0.53Ga0.47As/In0.52Al0.48As Wide Quantum Well MODFET Structure

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870670

Authors: Sangita R. Panda, Manoranjan Pradhan, Trinath Sahu, Ajit Kumar Panda

Institutions: Veer Surendra Sai University of Technology, Berhampur University

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407473918

FWCI:

Cites: 34

Cited by:

Related to: 10