Work

Field Effect Transistor Incorporating Negative Capacitance and Nanowire Structures for the Attenuation of Gate Leakage Phenomena

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870658

Authors: Aapurva Kaul, Sonam Rewari, Deva Nand

Institution: Delhi Technological University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407474067

FWCI: 1.612

Cites: 25

Cited by: 2

Related to: 10