Work

Implementation of High-K Gate Dielectric in Cylindrical SOI Schottky Barrier MOSFET for Enhanced ION/IOFF Ratio

Year: 2024

Type: conference-paper

Source: IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON)

DOI: 10.1109/edkcon62339.2024.10870826

Authors: Nitish Uppal, Amit Saxena, Vandana Nath, R.S. Gupta

Institution: Guru Gobind Singh Indraprastha University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407475631

FWCI:

Cites: 10

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Related to: 10