Work

Impact of Metal Gate Composition on Ultra-Thin HfYOx Gate Dielectrics

Year: 2024

Type: conference-paper

DOI: 10.1109/aespc63931.2024.10872015

Authors: Partha Pratim Maiti, Sandipan Mallik

Institutions: Biju Patnaik University of Technology, National Institute of Science and Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407576072

FWCI:

Cites: 17

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Related to: 10