Work

Features of the Ga2O3 Layers Synthesized on Silicon by Molecular Layering

Year: 2024

Type: article

Source: Crystallography Reports

DOI: 10.1134/s1063774524602107

Authors: A. V. Drozd, V. A. Dmitriev, I. E. Gabis, V. A. Moshnikov, A. P. Baraban

Institutions: St Petersburg University, Saint Petersburg State Electrotechnical University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407607120

FWCI:

Cites: 19

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Related to: 10