Polarization‐Modulated Multi‐Mode Optoelectronic Synaptic Transistor for Sensing‐Memory‐Logic Computing and Optical Wireless Communication
Year: 2025
Type: article
Abstract: Neuromorphic machine vision has attracted much attention in the field of artificial intelligence in the post‐Moore era. However, current strategies still suffer from limited modulation, single function, and complex device structure. Here, the integration of sensing, memory, logic computing, and optical wireless communication is realized in a single 2D van der Waals α‐In2Se3/SnS2 ferroelectric heterojunction field‐effect transistor. The device exhibits excellent nonvolatile memory performances including a large memory window (≈76 V), excellent endurance (>800 cycles), and good retention time (>104 s). The device can also emulate synaptic behaviors well such as short‐term to long‐term memory transitions, experiential learning, and associative learning. And the reconfigurable logic gates (AND, OR) can be implemented by controlling electrical and optical inputs. In addition, the nonvolatile output current triggered by optical pulse sequences can express the international English alphabet Morse code (A‐Z), which is expected to be used in the field of optical wireless communication for human–machine interfaces. This work emphasizes that 2D ferroelectric heterojunctions have the advantages of efficient modulation and high function integration, which have great potential for application in the development of future neuromorphic vision systems.
Source: Advanced Functional Materials
Authors: Wenjuan Ci, Peng Wang, Wuhong Xue, Tianqi Liu, Jingyuan Qu, Xiaohong Xu
Institution: Shanxi Normal University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4407610889