Work

Optimization of Cross-Bridge Kelvin Resistor (CBKR) Layout for the Precise Contact Resistance Measurement of TiSi2/n+ Si

Year: 2025

Type: article

Abstract: This study investigates the impact of cross-bridge Kelvin resistor (CBKR) layout designs on specific contact resistivity (ρc) measurements between TiSi2 and n+ Si. The theoretical ρc is calculated as a function of silicon doping concentration (NSi) and Schottky barrier height (ϕb) to evaluate the measurement value. Various CBKR patterns are fabricated and measured with different contact hole areas (Ac) and aligned margins (δ) to evaluate measurement accuracy. The results show that CBKR with a narrow active width (W) can more accurately measure the ρc compared to the conventional layout mainly attributed to the current path confinement. In addition, if the contact hole length (L) is smaller than the transfer length (LT), the entire Ac contributes to the voltage drop of contact resistance (Rc), resulting in improved measurement accuracy. In contrast, if δ is increased, the measurement error decreases due to current dispersion near the recessed TiSi2 region, which is different from conventional CBKR layouts. Consequently, the measured ρc with an optimized layout shows a close value to the theoretical ρc.

Source: Electronics

DOI: 10.3390/electronics14040762

Authors: Hyungju Noh, Changmin Chae, Yelim Jeon, Dongseok Oh, Sangwan Kim

Institution: Sogang University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,896