Work

Broadband InSe/MoS2 Type-II Heterojunction Photodetector with Gate-Tunable Polarity Induced Near-Linear Wavelength-Dependent Photocurrent Peak

Year: 2025

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.4c22132

Authors: Wenying Zhang, Kuan-Hao Chiao, Hsin-Wen Huang, Mohamed Abid, Cormac Ó Coileáin, Kuan-Ming Hung, Ching-Ray Chang, Yuh-Renn Wu, Han-Chun Wu

Institutions: Beijing Institute of Technology, National Taiwan University, Universität der Bundeswehr München, National Kaohsiung University of Science and Technology, Chung Yuan Christian University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Science and Technology Council, National Natural Science Foundation of China, Beijing Institute of Technology

Awards: G1019136852, Development of Simulation Software to Analyze the Tunneling Junction, Defect-Assisted Leakage, and Ion Migration Model in Nitride or Perovskite-Based Multi-Wavelength Leds．（Ｉｉ）, Develpment of Exciton Diffusion, Quency, Fission, and Thermally Activated Delayed Fluorescence Software for New Generation Organic Light Emitting Diodes, G5804711059, G873774236

OpenAlex ID: W4407675568

FWCI: 1.671

Cites: 66

Cited by: 8

Related to: 10