Work

Impact of ALD Al2O3 Dielectrics on the Device Performance of SiC-Based Field-Effect Transistors (FETs): A Study of Atomic Diffusion

Year: 2025

Type: article

Source: ECS Journal of Solid State Science and Technology

DOI: 10.1149/2162-8777/adb78c

Authors: Kyeong-Keun Choi, Sung-Kyu Kim, Seongjun Kim, Young Jae Park, Woong-Suk Yang, Sung-Woong Han, Dae-Hwan Kang

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407685953

FWCI: 0.453

Cites: 32

Cited by: 2

Related to: 10