Work

High-Performance Enhancement-Mode GaN p-FET Fabricated With an Etch-Stop Process

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3540053

Authors: Hengyuan Qi, Teng Li, Jingjing Yu, Jiawei Cui, Junjie Yang, Sihang Liu, Yunhong Lao, Han Yang, Xuelin Yang, Maojun Wang, Bo Shen, Yamin Zhang, Shiwei Feng, Meng Zhang, Jin Wei

Institutions: Beijing University of Technology, Peking University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Key Research and Development Program of China

Award: G3927197278

OpenAlex ID: W4407690852

FWCI: 4.032

Cites: 37

Cited by: 13

Related to: 10