Systematic Analysis of Driving Modes and NiFe Layer Thickness in Planar Hall Magnetoresistance Sensors
Year: 2025
Type: article
Abstract: Planar Hall magnetoresistance (PHMR) sensors are widely utilized due to their high sensitivity, simple structure, and cost-effectiveness. However, their performance is influenced by both the driving mode and the thickness of the ferromagnetic layer, yet the combined effects of these factors remain insufficiently explored. This study systematically investigates the impact of Ni80Fe20 thickness (5–35 nm) on PHMR sensor performance under constant current (CC) and constant voltage (CV) modes, with a focus on optimizing the peak-to-peak voltage (Vp-p). In CC mode, electron surface scattering at 5–10 nm increases resistance, leading to a sharp rise in Vp-p, followed by a decline as the thickness increases. In contrast, CV mode minimizes resistance-related effects, with sensor signals predominantly governed by magnetization-dependent resistivity. Experimentally, the optimal Vp-p was observed at 25 nm in CV mode. However, for thicknesses beyond this point, the reduction in sensor resistance suggests that voltage distribution across both the sensor and external load resistance significantly influences performance. These findings provide practical insights into optimizing PHMR sensors by elucidating the interplay between driving modes and material properties. The results contribute to the advancement of high-performance PHMR sensors with enhanced signal stability and sensitivity for industrial and scientific applications.
Source: Sensors
DOI: 10.3390/s25041235
Authors: Changyeop Jeon, Mijin Kim, Jinwoo Kim, Sunghee Yang, Eunseo Choi, Byeonghwa Lim
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,137
Funder: Andong National University
OpenAlex ID: W4407705483