Work

Impact of Sulphide Passivation of the Substrate on the Photoluminescent Properties of InAs Autoepitaxial Layers

Year: 2024

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s106373972470104x

Authors: D. V. Kolyada, D. D. Firsov, O. S. Komkov, A. V. Solomonov

Institution: Saint Petersburg State Electrotechnical University

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407765151

FWCI:

Cites: 17

Cited by:

Related to: 10