Work

Physical and Technological Causes of Channel Inhomogeneity in InSb Single Crystals Heavily Doped with Te

Year: 2024

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739724701038

Authors: N. Yu. Komarovskiy, Yu. N. Parkhomenko, E. V. Molodtsova, E. O. Zhuravlev, V. A. Chuprakov, R. Yu. Kozlov, S. N. Knyazev, A. G. Belov

Institutions: National University of Science and Technology, Giredmet (Russia)

Language: English

Topic: Solidification and crystal growth phenomena

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407765167

FWCI:

Cites: 7

Cited by:

Related to: 10