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MICROELECTRONIC SWITCH BASED ON SEMICONDUCTOR (In2Te3)0.97(MnTe2)0.03

Year: 2025
Type: article
Abstract: It has been found that the switching effect occurs in the In2Te3 semiconductor compound and solid solution crystals based on it. With this in mind, a thin-film microelectronic switch was created based on the (In2Te3)0.97(MnTe2)0.03 solid solution crystal, and its important characteristics were studied. It has been established that the switching mechanism in this semiconductor material has an electronic-thermal character and varies with temperature.
Language: English
Open Access status: bronze
OpenAlex ID: W4407775996
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