Ti-doping in Silicon Nitride: Enhanced Charge Trap Characteristics for Flash Memory
Year: 2025
Type: article
Source: ACS Applied Electronic Materials
Authors: Hanyeol Ahn, Hyun Su Park, Minseon Gu, Young Hun Khim, Hyun Don Kim, Jaehui Im, Sangwoo Nam, Eunjip Choi, Young Jun Chang, Moonsup Han
Institution: University of Seoul
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4407791145