Year: 2024
Type: article
Abstract: The characteristics and application fields of silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect transistor (MOSEFT) and gallium nitride (GaN) MOSFET are compared and analyzed in this paper. SiC MOSFETs have advantages such as high melting point and thermal stability, high electron mobility, high breakdown field strength, low electron drift rate and high thermal conductivity. On the flip side, GaN MOSFETs are renowned for their lightning-fast switching speeds and efficient performance, making them suitable for a wide range of electronic systems. The investigation examined the structural differences between the two devices, looking at the selection of materials, manufacturing processes and electrical performance. Through detailed comparison, the unique advantages of each technology are highlighted. In addition, the paper explores the application of SiC MOSFETs and GaN MOSFETs in the electric vehicle and aerospace industries, providing case studies, experimental data, and trend analysis to illustrate their potential and promise. In conclusion, by comparing SiC MOSFETs and GaN MOSFETs, this paper offers valuable insight into their characteristics and applications. With the growing demand for more efficient and reliable electronic systems, these emerging semiconductor devices are predicted to play an increasing role in driving technological progress and industrial innovation.
DOI: 10.54097/9d262220
Author: Xiyao Liu
Institution: Shanghai Maritime University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4407820305