Work

A physics-based modeling method for DC characteristics of GaN HEMTs with conventional, dual-, and tri-gate

Year: 2025

Type: article

Source: Physica Scripta

DOI: 10.1088/1402-4896/adb917

Authors: Ashu Wang, Lingyan Zeng

Institution: Chengdu University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4407822274

FWCI: 0.323

Cites: 20

Cited by: 1

Related to: 10